Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications
نویسندگان
چکیده
An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform. With the VTH ≈ 100mV ELVT FinFET shows 15% IEFF improvement at same VDD compared its super-low (SLVT) counterpart, while mismatch and reliability performances are comparable. FT/FMAX of 305GHz/ 315GHz comparable Maximum Stable Gain (MSG) SLVT gives an advantage 5G applications. Local oscillator (LO) chain blocks investigated as a circuit level example confirm benefits FinFET. LO transmission Line (TL) driver using results in 9% 8% reduction power consumption respectively phase-noise (PN) design. If operated V DD 0.525V can improve VCO Figure Merit (FOMVCO) by 2.8dB.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2020.3046953